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| FDMA1027P Dual P-Channel PowerTrench(R) MOSFET August 2006 FDMA1027P Dual P-Channel PowerTrench(R) MOSFET General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. Features -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V RDS(ON) = 160 m @ VGS = -2.5 V RDS(ON) = 240 m @ VGS = -1.8 V Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm RoHS Compliant PIN S1 G1 D2 S1 D1 D2 G1 D2 1 2 3 6 5 4 D1 G2 S2 MicroFET Symbol VDSS VGSS ID PD TJ, TSTG D1 G2 S2 Ratings -20 8 (Note 1a) (Note 1a) (Note 1b) -2.2 -6 1.4 0.7 -55 to +150 Units V V A W oC Absolute Maximum Ratings TA = 25C unless otherwise noted Parameter MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current -Continuous -Pulsed Power dissipation for Single Operation Power dissipation for Single Operation Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 86 (Single Operation) 173 (Single Operation) 69 (Dual Operation) 151 (Dual Operation) o C/W Package Marking and Ordering Information Device Marking 027 Device FDMA1027P Reel Size 7inch 1 Tape Width 8mm Quantity 3000 units FDMA1027P Rev. D (W) (c)2006 Fairchild Semiconductor Corporation FDMA1027P Dual P-Channel PowerTrench(R) MOSFET Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, VGS = 0V, ID = -250A ID = -250A, Referenced to 25C VDS = -16V, VGS = 0V VGS = 8V, VDS = 0V -20 -12 -1 100 V mV/C A nA On Characteristics (Note 2) VGS(th) VGS(th) TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = -250A ID = -250A, Referenced to 25C VGS = -4.5V, ID = -3.0A VGS = -2.5V, ID = -2.5A RDS(ON) Static Drain-Source On-Resistance VGS = -1.8V, ID = -1.0A VGS = -4.5V, ID = -3.0A TJ = 125C ID(on) gFS On-State Drain Current Forward Transconductance VGS = -4.5V, VDS = -5V VDS = -5V, ID = -3.0A -0.4 -20 -0.7 2 90 120 172 118 7 -1.3 120 160 240 160 A S m V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10V, VGS = 0V, f = 1.0MHz 435 80 45 pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10V, ID = -3.0A, VGS = -4.5V VDD = -10V, ID = -1A VGS = -4.5V, RGEN = 6 9 11 15 6 4 0.8 0.9 18 19 27 12 6 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0V, IS = -1.1 A (Note 2) IF= -3.0A, dIF/dt=100A/s -0.8 17 6 -1.1 -1.2 A V ns nC 2 FDMA1027P Rev. D (W) FDMA1027P Dual P-Channel PowerTrench(R) MOSFET Electrical Characteristics TA = 25C unless otherwise noted Notes: 1. RJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a) RJA = 86C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) RJA = 173C/W when mounted on a minimum pad of 2 oz copper a) 86oC/W when mounted on a 1in2 pad of 2 oz copper b) 173oC/W when mounted on a minimum pad of 2 oz copper Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3 FDMA1027P Rev. D (W) FDMA1027P Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics 6 5 -ID, DRAIN CURRENT (A) 4 -1.8V VGS = -4.5V -3.5V -3.0V -2.5V -2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 VGS = -1.5V 2.6 2.2 1.8 1.4 1 0.6 3 2 -1.5V -1.8V -2.0V -2.5V -3.0V -3.5V 1 0 0 0.5 1 1.5 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 -4.5V 0 1 2 3 4 -ID, DRAIN CURRENT (A) 5 6 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 -50 RDS(ON), ON-RESISTANCE (OHM) ID = -3.0A VGS = -4.5V 0.28 ID = -1.5A 0.22 0.16 TA = 125oC 0.1 TA = 25 C o 0.04 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 6 VDS = -5V 10 VGS = 0V -IS, REVERSE DRAIN CURRENT (A) 5 -ID, DRAIN CURRENT (A) 1 4 3 2 1 0 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = 125oC 0.1 TA = 125oC 0.01 25oC -55oC -55 C 25oC o 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4 FDMA1027P Rev. D (W) FDMA1027P Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3.0A 700 600 CAPACITANCE (pF) f = 1MHz VGS = 0 V 4 VDS = -5V -15V 500 400 300 200 100 Crss 3 -10V Ciss 2 1 Coss 0 0 1 2 3 Qg, GATE CHARGE (nC) 4 5 0 0 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 100 ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 10ms 100ms 1s 10s DC VGS = -4.5V SINGLE PULSE RJA = 173oC/W TA = 25oC 1ms 100us 1 0.1 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 9. Maximum Safe Operation Area Figure 10. Single Pulse Maximum Power Dissipation Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 5 FDMA1027P Rev. D (W) FDMA1027P Dual P-Channel PowerTrench(R) MOSFET 6 FDMA1027P Rev. D (W) FDMA1027P Dual P-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 7 FDMA1027P Rev. D (W) |
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